| PART |
Description |
Maker |
| RLT1550-5G |
Infrared Laserdiode
|
Roithner LaserTechnik G...
|
| RLT808500G |
High Power Infrared Laserdiode
|
Roithner LaserTechnik GmbH
|
| EU-38-1 |
LASERDIODE DRIVER
|
Roithner LaserTechnik GmbH
|
| RLT6505MG |
Visible Wavelength Laserdiode
|
Electronic Theatre Controls, Inc.
|
| SPLPL90 |
Impuls-Laserdiode im Plastikgeh?se 25 W Spitzenleistung Pulsed Laser Diode in Plastic Package 25 W Peak PowerLead (Pb) Free Product - RoHS Compliant
Impuls-Laserdiode im Plastikgeh漉se 25 W Spitzenleistung Pulsed Laser Diode in Plastic Package 25 W Peak PowerLead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC
OPTEK Technologies
|
| 1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm
AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
